基于π型諧波控制網絡的高效功率放大器設計

摘" 要： 為了提高通信系統的工作效率，提出一種基于F類理論的π型諧波控制網絡。該網絡利用直流偏置電路引入二次諧波短路點，從而降低諧波控制電路的復雜度；同時，能夠確保二次、三次諧波阻抗不受后續基波匹配電路的影響。為避免寄生參數對晶體管芯漏極阻抗的影響，在π型諧波控制網絡與晶體管之間引入L型寄生補償電路，實現二次諧波阻抗趨近零、三次諧波阻抗趨近無窮大。為驗證所設計網絡的可行性，設計一款高效率F類功率放大器并進行仿真測試，結果表明在1.8～2.1 GHz工作頻帶內，飽和輸出功率為43.21～44.84 dBm，增益為13.21～14.84 dB，功率附加效率為69.59%～73.54%。由此證明了所提出的π型諧波控制網絡在高效率放大器設計中能夠很好地滿足各項性能指標。

關鍵詞： F類功率放大器； 工作效率； π型諧波控制網絡； 諧波阻抗； L型寄生補償電路； 聯合仿真

中圖分類號： TN722?34" " " " " " " " " " " " " " "文獻標識碼： A" " " nbsp; " " " " " " " 文章編號： 1004?373X（2025）02?0009?05

Design of high?efficiency power amplifier based on π?type harmonic control network

WANG Yating1， YANG Ping1， WANG Jun2， BAI Tian2

（1. PLAC Laboratory， College of Physical Science and Technology， Central China Normal University， Wuhan 430079， China;

2. CICT Mobile Communication Technology Co.， Ltd.， Wuhan 430205， China）

Abstract： In order to enhance the efficiency of the communication system， a π?type harmonic control network based on class F theory is proposed. In this network， the DC bias circuit is used to introduce second harmonic short?circuit points， thereby simplifying the complexity of the harmonic control circuit. Simultaneously， it can ensure that the second and third harmonic impedance is not affected by the subsequent fundamental wave matching circuit. In order to mitigate the impact of parasitic parameters on transistor core leakage extreme impedance， an L?type parasitic compensation circuit is introduced between the π?type harmonic control network and the transistor， so as to realize the second harmonic impedance approaching zero and the third harmonic impedance approaching infinity. In order to validate the feasibility of the designed network， a high?efficiency class?F power amplifier is designed and simulated. The results show that within the operating frequency band of 1.8～2.1 GHz， the saturated output power is 43.21～44.84 dBm， the gain is 13.21～14.84 dB， and the power?added?efficiency is 69.59%～73.54%. It confirms that the proposed π?type harmonic control network can effectively meet performance requirements for the high?efficiency amplifier design.

Keywords： class?F power amplifier; work efficiency; π?type harmonic control network; harmonic impedance; L?type parasitic compensation circuit; joint simulation

0" 引" 言

隨著第五代移動通信技術迅猛發展，現代高速通信系統對射頻功率放大器提出了更為嚴苛的要求，這些要求涵蓋了更高的效率、更大的輸出功率以及更卓越的線性特性。近年來，學者們廣泛而深入地探討了高效率功放F類[1?5]和逆F類[6?9]，力求在性能與技術上實現突破。與此同時，前兩代半導體已無法滿足射頻設計需求，而基于新一代半導體GaN的功放[10?14]在發射機系統中展現出了廣闊的應用前景，為通信行業帶來了巨大的變革可能性。

F類功率放大器是通過調節功率放大器漏極的電壓和電流波形來提高效率，然而，由于漏源電容和封裝寄生參數[15]等因素的影響，漏極的二次和三次諧波阻抗可能會迅速偏離理想F類阻抗范圍。……