一種基于開爾文封裝的SiC MOSFET器件鍵合線狀態監測方法

摘" 要： 隨著SiC MOSFET器件的廣泛應用，其可靠性問題備受關注。鍵合線失效是SiC MOSFET器件故障的主要原因，因此需要對其進行狀態監測以保證器件的正常運行。文中提出一種基于開爾文封裝的SiC MOSFET器件鍵合線狀態監測方法。當鍵合線失效時，其等效阻抗會發生變化，故在開爾文源極和功率源極之間注入恒定的高頻脈動電流，將阻抗的變化轉換為開爾文源極和功率源極兩端電壓的變化，通過該電壓對鍵合線健康狀態進行監測。實驗結果表明，所提方法監測參量的變化可以直觀地反映失效鍵合線的數目。該方法通過外加高頻脈動電流源實現對鍵合線的監測，只需測量對應電壓，參數提取簡單，特征參量與鍵合線失效關系明顯，無需復雜的數據處理和計算；此外，還不受源極電流等功率回路參數和驅動回路的影響，電路結構精簡可靠，具有在線監測的潛力。

關鍵詞： SiC MOSFET器件； 鍵合線狀態監測； 開爾文封裝； 鍵合線失效； 監測電路； 高頻脈動電流

中圖分類號： TN386?34" " " " " " " " " " " " " " "文獻標識碼： A" " " " " " " " " " " 文章編號： 1004?373X（2025）04?0040?05

Method of SiC MOSFET device bond wire condition monitoring based on Kelvin package

XUE Bingjun， GUO Shilong， YAN Yanjin

（College of Electrical Engineering amp; New Energy， China Three Gorges University， Yichang 443000， China）

Abstract： With the wide application of SiC MOSFET device， its reliability has attracted much attention. Bond wire failure is the main cause of SiC MOSFET device failure， so it is necessary to monitor its condition to ensure the normal operation of the device. A method of SiC MOSFET device bond wire condition monitoring based on Kelvin package is proposed. When the bond wire fails， its equivalent impedance can change. A constant high frequency pulsating current is injected between the Kelvin source and the power source to convert the impedance change into the voltage change at both ends of the Kelvin source and the power source， which can be used to monitoring the health condition of the bond wire. The experimental results show that the proposed method can intuitively reflect the number of failed bond wires by monitoring the changes in parameters. The method can monitor the bond wire by plus external high frequency pulsating current. It only needs to measure the corresponding voltage. Parameter extraction is simple， and the relationship between characteristic parameters and the bond wire failure is obvious， without complicated data processing and calculation. In addition， it is not affected by power loop parameters such as source current and drive loop. The circuit structure is simple and reliable， which has the potential of online monitoring.

Keywords： SiC MOSFET device; bond wire condition monitoring; Kelvin package; bond wire failure; monitoring circuit; high frequency pulsating current

0" 引" 言

SiC MOSFET器件具有高擊穿場強、高飽和電子漂移速率、高熱導率等優點，在高頻、高溫應用領域有較好的應用前景[1?2]。但是復雜惡劣的工作條件使得SiC MOSFET更容易發生老化，由此引起的故障可能會造成巨大損失[3]。因此，監測器件的失效進程，提前更換老化嚴重的SiC MOSFET器件，以有效保證系統的可靠運行是十分重要的[4]。在SiC MOSFET的各種故障情況中，由不同材料之間的熱膨脹系數不匹配引起的鍵合線斷裂是其中一種常見的原因。……