摘 要:半導體斷路開關(SOS)效應的發現,促進了全固態脈沖功率源技術的發展和應用。采用一維流體模型,利用SOS數值模擬程序對SOS二極管P+-P-N-N+結構的電流截斷特性進行了數值模擬研究。研究了SOS二極管P區擴散深度、外電路參數對SOS電流截斷特性的影響。結果表明:P區擴散深度、次級儲能電容C2、反向泵浦電感L-的大小對SOS的反向電流截斷時間均有較大影響;隨著次級儲能電容和反向泵浦電感的增大,電流截斷時間增大,反向電流峰值和反向電壓峰值減小。該研究對SOS二極管工藝設計和外電路優化設計具有理論意義和實用價值。
關鍵詞: 半導體斷路開關; 脈沖功率源; 數值模擬; 電流截斷特性
中圖分類號:TN389 文獻標識碼:A
文章編號:1004-373X(2010)12-0179-03
Numerical Simulation of Current Interruption Characteristics in Semiconductor Cut-off Switches
YANG Hai-yan, ZHAO Xi-an
(Informatization Research Laboratory, Xi’an Military Academy, Xi’an 710108, China)
Abstract: The discovery of the semiconductor opening switch (SOS) effect promoted the development and applications of the all-solid-state pulsed power generator technology. A one-dimensional fluid model is adopted to study the current interuption characteristics of SOS diode P+-P-N-N+ structure by using SOS numerical simulation program. The influences of the diffusion depth in the diode P-type region on the current interruption characteristics of SOS diode is analyzed. The result shows that the influences of the diffusion depth of P-type region, reverse pulse inductance L-and secondary capacitor C2 in the external circuit on the reverse current interuption time of SOS is obvious, the peak values of reverse current and reverse voltage decreases with the increase of the secondary capacitor C2 and reverse pulse inductance L-. The results obtained in this thesis possesses a certain theoretical and practical significance for the SOS diode design and the external circuit optimization.
Keywords: semiconductor cut-off switch; pulsed power generator; numerical simulation; current interruption characteristics
1991年,以LYUBUTIN S K教授為首的俄羅斯愛卡特林堡電物理研究所的研究小組在對用于高壓整流的具有P+-P-N-N+結構二極管進行實驗時發現,在一定條件下,通過二極管的高密度電流在納秒級時間內被截斷的現象,稱之為半導體斷路開關效應[1](SOS)。SOS效應的發現,促進了全固態脈沖功率源技術的發展和應用。基于SOS二極管的脈沖功率源,具有納秒級電流截斷時間,可獲得數十kA的電流和mV級電壓的高功率脈沖,脈沖重復頻率可達kHz[2-3]。
1 半導體斷路開關的基本工作原理
圖1是半導體斷路開關的基本回路。通過SOS二極管的電流為ISOS;負載電阻RL上的電壓為VR;電容C1上的初始電壓為U0。
在正向泵浦階段,開關S+閉合,S-斷開,初級儲能電容C1通過正向泵浦電感L+,SOS對次級儲能電容C2充電。……