Review of gallium oxide based field-effect transistors and Schottky barrier diodes
2019-02-21 01:23:56ZengLiu,Pei-GangLi,Yu-SongZhi等
Chinese Physics B 2019年1期
- Chinese Physics B的其它文章
- Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
- Exploring the effect of aggregation-induced emission on the excited state intramolecular proton transfer for a bis-imine derivative by quantum mechanics and our own n-layered integrated molecular orbital and molecular mechanics calculations
- Influence of wall friction on granular column
- High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition
- Criteria for Beverloo's scaling law
- Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments