摘 要:隨著芯片制造技術的不斷發展,絕緣柵雙極型晶體管(IGBT)芯片厚度不斷減薄,同時為了增加過電流能力,柵極溝槽密度越來越大。芯片結構的變化對封裝行業提出了新的挑戰,尤其是鋁線鍵合工藝。本文主要介紹了針對溝槽型場截止結構的絕緣柵雙極型晶體管(Trench-FS IGBT)的鍵合技術。通過多次驗證實驗,深入研究鋁線鍵合工藝對器件耐壓及漏電特性的影響,并得出結論:器件的可靠性可以通過鍵合第一焊點分布、焊線參數及焊線線徑大小三個因素來改善。
關鍵詞:鋁線鍵合;絕緣柵雙極型晶體管;耐壓;漏電
中圖分類號:TN322.8 文獻標識碼:A 文章編號:2096-4706(2018)12-0041-03
Effect of Aluminum Wire Bonding Process on Voltage and
Leakage Characteristics of FS-IGBT Devices
JIANG Wei,AO Libo,LIANG Saichang,LIU Yongqiang
(Telecommunication Institute of Gree Electric Appliances,Inc. of Zhuhai,Zhuhai 519070,China)
Abstract:With the development of chip manufacturing technology,the thickness of IGBT chip is getting thinner while the density of trench in gate need to be larger,so as to keep more current to get through. The change of chip structure leads to new challenge in packaging,especially the aluminum wire bonding process. This paper mainly introduces the bonding technology of insulated gate bipolar transistor(Trench-FS IGBT) with groove field cut-off structure. The influence of aluminum wire bonding process on the voltage withstanding and leakage characteristics of the device is studied through many verification experiments. It is concluded that the reliability of the device can be improved by three factors:the distribution of the first solder joint,the parameters of the solder wire and the diameter of the solder wire.
Keywords:aluminum wire bonding;insulated gate bipolar transistor;withstand voltage;leakage current
0 引 言
IGBT(Insulated Gate Bipolar Transistor),又稱絕緣柵雙極型晶體管,是由BJT(雙極型三極管)和MOS(絕緣柵型場效應管)組成的復合全控型電壓驅動式功率半導體器件,屬于高壓大電流高頻MOS控制型雙極晶體管。IGBT因其與生俱來的節能性,在中國倡導節能減排和大力發展新能源的當下備受推崇。
按芯片技術劃分,IGBT有PT(Punch Through,貫穿型)、NPT(Non Punch-Through,非貫穿型)和FS(Field Stop,場截止型)。
按柵結構劃分,IGBT有平面柵(Planar)和溝槽柵(Trench)兩類。平面柵承受短路能力較高,柵極電容較小(約為溝槽柵器件的三分之一);溝槽柵單元面積較小,電流密度較大,通態損耗降低約30%,擊穿電壓更高。
目前國內市場上使用較多的IGBT芯片為PT+Planar,而本文提及的IGBT芯片結構為FS+Trench,結構圖如圖1所示。
功率半導體的發展趨勢為小體積、高電流密度、低成本。因此,FS+Trench結構的IGBT是未來的發展方向,但是FS+Trench結構生產出的薄晶圓非常柔韌,且隨著晶圓變薄,更容易出現晶圓的翹曲和變形,導致生產的芯片機械強度差,給封裝帶來更大的挑戰,特別是焊線工藝。……