一種GaN寬禁帶功率放大器的設計

摘 要:氮化鎵(GaN)作為第三代半導體材料的典型代表之一，由于其寬帶隙、高擊穿電場強度等特點，被認為是高頻功率半導體器件的理想材料。為研究GaN功率放大器的特點，基于Agilent ADS仿真軟件，利用負載/源牽引方法設計制作了一種S波段GaN寬禁帶功率放大器(10 W)。詳細說明了設計步驟并對放大器進行了測試，數據表明放大器在2.3～2.4 GHz范圍內可實現功率超過15 W，附加效率超過67%的輸出。實驗結果證實，GaN功率放大器具有高增益、高效率的特點。

關鍵詞:寬禁帶半導體; 功率放大器; 附加效率; GaN

中圖分類號:TN95 文獻標識碼:A

文章編號:1004-373X(2010)13-0045-03

Design of GaN Wide-bandgap Power Amplifier with High Efficiency

ZHANG Fang-di1， ZHANG Min1， YE Pei-da2

(1. East China Research Institute of Electronic Engineering， Heifei 230031， China;

2. Key Lab of Information Photonics and Optical Communications， Ministry of Education， School of Telecommunication Engineering，

Beijing University of Posts and Telecommunications， Beijing 100876， China)

Abstract: GaN as one typical representative of the third generation semiconductor materials is considered to be a perfect candidate for high-frequency semiconductor power devices due to its features such as wide bandgap and high critical electric field. By using a loadpull/sourepull method， a S-band GaN wide-bandgap power amplifier (10 W) is designed and fabricated based on the Agilent ADS software to investigate the properties of GaN power amplifier. The design procedure for the power amplifier is illustrated in detail. The power amplifier was tested. The test results show that the output power over 15W and power added efficiency (PAE) above 67% can be realized by the designed amplifier at the range of 2.3～2.4 GHz， and prove that the GaN wide-bandgap power device has the characteristics of high gain and high efficiency.

Keywords: wide-bandgap semiconductor; power amplifier; power added efficiency; GaN

0 引 言

半導體功率器件按材料劃分大體經歷了三個階段。第一代半導體功率器件以Si雙極型功率晶體管為主要代表，主要應用在S波段及以下波段中[1]。Si雙極型功率晶體管在L波段脈沖輸出功率可以達到數百瓦量級，而在S波段脈沖功率則接近200 W。第二代半導體功率器件以GaAs場效晶體管為代表，其最高工作頻率可以達到30~100 GHz。GaAs場效應晶體管在C波段最高可輸出功率接近100 W，而在X波段則可達到25 W。第三代半導體功率器件以SiC場效應晶體管和GaN高電子遷移率晶體管為主要代表。同第一代、第二代半導體材料相比，SiC和GaN半導體材料具有寬禁帶、高擊穿場強、高飽和電子漂移速率以及抗輻射能力強等優點，特別適合應用于高頻、高功率、抗輻射的功率器件，并且可以在高溫惡劣環境下工作[2-5]。由于具備這些優點，寬禁帶半導體功率器件可以明顯提高電子信息系統的性能，廣泛應用于人造衛星、火箭、雷達、通訊、戰斗機、海洋勘探等重要領域[6-10]。……